Title :
An improved Mo/n-GaAs contact by interposition of a thin Pd layer
Author :
Nee, C.Y. ; Chang, Chun-Yen ; Cheng, T.F. ; Huang, T.S.
Author_Institution :
Inst. of Electr. & Comput. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
6/1/1988 12:00:00 AM
Abstract :
The idea of limited reaction has been used to solve the adhesion and stability problems of Mo/n-GaAs and Pd/n-GaAs contacts. The structural and electrical properties of Mo/Pd/n-GaAs with different thicknesses of Pd layer, annealed from 300 degrees C to 500 degrees C for 30 min, were investigated. Adhesion of Mo to GaAs has been improved with the interposition of a thin Pd layer. With increasing Pd thickness, wider temperature ranges were achieved in which the contact showed rectifying Schottky behavior. The Schottky barrier heights were nearly constant below 300 degrees C and then dropped sharply at 450 degrees C, except for Mo(2000 AA)/Pd(200 AA)/n-GaAs diodes. The ideality factors converged to nearly unity at 300 degrees C and then increased sharply from 300 to 500 degrees C, except for Mo(2000 AA)/Pd(200 AA)/n-GaAs diodes, which maintained a nearly constant value of 1.34 from 400 to 500 degrees C.<>
Keywords :
Schottky-barrier diodes; gallium arsenide; molybdenum; palladium; semiconductor technology; semiconductor-metal boundaries; 200 A; 30 min; 300 to 500 C; Mo-GaAs contacts; Mo-Pd-GaAs contacts; Pd thickness; Schottky barrier heights; adhesion; electrical properties; ideality factors; limited reaction; n-GaAs contacts; rectifying Schottky behavior; stability problems; structure properties; temperature ranges; thicknesses of Pd layer; Adhesives; Annealing; Degradation; Gallium arsenide; Schottky barriers; Schottky diodes; Surface cracks; Surface morphology; Temperature; Testing;
Journal_Title :
Electron Device Letters, IEEE
