Title :
Total dose effects in composite nitride-oxide films
Author :
Lee, Sung-Chul ; Raparla, A. ; Li, Y.F. ; Gasiot, G. ; Schrimpf, R.D. ; Fleetwood, D.M. ; Galloway, K.F. ; Featherby, M. ; Johnson, D.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
fDate :
12/1/2000 12:00:00 AM
Abstract :
Total dose effects in composite nitride-oxide (NO) films with nitride thicknesses from 58 nm to 183 nm and oxide thicknesses from 5 nm to 30 nm are studied. A model is proposed in order to relate the threshold-voltage shift to the NO thickness combinations. It is found that the electron-hole pairs generated in the bulk of the nitride do not contribute significantly to shifting the threshold-voltage. The NO films with 10 nm oxide show smaller threshold-voltage shift than composite films with any other oxide thicknesses
Keywords :
MIS structures; X-ray effects; dielectric thin films; MNOS structure; Si3N4-SiO2; X-ray irradiation; composite nitride-oxide film; electron-hole pair; threshold voltage; total dose effect; Capacitors; Degradation; Dielectric thin films; Electron traps; Ionizing radiation; MOSFETs; Power transistors; Radiation effects; Silicon compounds; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
