Title :
Influence of temperature on dose rate laser simulation adequacy
Author :
Skorobogatov, P.K. ; Nikiforov, A.Y. ; Demidov, A.A. ; Levin, V.V.
Author_Institution :
Specialized Electron. Syst., Moscow, Russia
fDate :
12/1/2000 12:00:00 AM
Abstract :
Temperature dependence of the equivalent dose rate in silicon integrated circuits (IC´s) under 1.06 μm laser irradiation is investigated. 2D-numerical modeling was carried out to analyze the temperature dependence of dose rate laser simulation adequacy in application to specialized test structures. Experimental validation was performed in the temperature range from 20 to 100°C
Keywords :
circuit simulation; digital simulation; elemental semiconductors; integrated circuit modelling; integrated circuit reliability; integrated circuit testing; laser beam effects; silicon; 1.06 micrometre; 20 to 100 degC; 2D-numerical modeling; IC radiation effects; Si; equivalent dose rate; laser irradiation; specialized test structures; temperature dependence; Analytical models; Application specific integrated circuits; Circuit simulation; Circuit testing; Integrated circuit modeling; Integrated circuit testing; Laser modes; Silicon; Temperature dependence; Temperature distribution;
Journal_Title :
Nuclear Science, IEEE Transactions on
