Title :
Radiation effects in a CMOS active pixel sensor
Author :
Hopkinson, Gordon R.
Author_Institution :
Sira Electro-Opt. Ltd., Chislehurst, UK
fDate :
12/1/2000 12:00:00 AM
Abstract :
A CMOS active pixel sensor has been evaluated with Co60, 10 MeV proton and heavy-ion irradiation. Permanent displacement damage effects were seen but total ionizing dose-induced dark current and increase in power supply current annealed at 100°C. Large changes in responsivity were seen after proton irradiation, which subsequently annealed. Mechanisms for these responsivity changes are discussed, but a definitive cause has not yet been established
Keywords :
CMOS image sensors; dark conductivity; gamma-ray effects; ion beam effects; proton effects; 10 MeV; 100 degC; CMOS active pixel sensor; displacement damage effects; gamma irradiation; heavy-ion irradiation; power supply current; proton irradiation; responsivity; total ionizing dose-induced dark current; Annealing; Current supplies; Dark current; Ionizing radiation sensors; Manufacturing; Performance evaluation; Photodiodes; Protons; Radiation effects; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
