Title :
Analysis of SEB and SEGR in super-junction MOSFETs
Author :
Huang, S. ; Amaratunga, G.A.J. ; Udrea, F.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
fDate :
12/1/2000 12:00:00 AM
Abstract :
The electric field distribution in the super-junction power MOSFET is analyzed using analytical modeling and numerical simulations in this paper. The single-event burnout (SEB) and single-event gate rupture (SEGR) phenomena in this device are studied in detail. It is demonstrated that the super-junction device is much less sensitive to SEB and SEGR compared to the standard power MOSFET. The physical mechanism is explained
Keywords :
ion beam effects; power MOSFET; radiation hardening (electronics); semiconductor device models; space vehicle electronics; 2D MEDICI simulation; HI effects; analytical modeling; electric field distribution; numerical simulation; physical mechanism; single-event burnout; single-event gate rupture; superjunction power MOSFET; transient field; Analytical models; Breakdown voltage; Charge measurement; Current measurement; MOSFETs; Numerical models; Numerical simulation; Performance evaluation; Pulse measurements; Pulsed laser deposition;
Journal_Title :
Nuclear Science, IEEE Transactions on
