Investigation of State Stability of Low-Resistance State in Resistive Memory

Author

Park, Jubong ; Jo, Minseok ; Bourim, El Mostafa ; Yoon, Jaesik ; Seong, Dong-jun ; Lee, Joonmyoung ; Lee, Wootae ; Hwang, Hyunsang

Author_Institution

Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea

Volume

31

Issue

5

fYear

2010

fDate

5/1/2010 12:00:00 AM

Firstpage

485

Lastpage

487

Abstract

We investigated the state stability of the low-resistance state (LRS) in a resistive switching memory having a Pt/Cu:MoOx/GdOx/Pt structure. Various resistance values of LRS were accurately controlled using an external load resistor connected in series with the resistive memory device. We found that the retention time decreased with an increase in the resistance of LRS. We performed accelerating tests for resistance transition from a low- to a high-resistance state under temperatures ranging from 200??C to 250??C. A predicted resistance of LRS for a ten-year retention period at 85??C was determined based on the Arrhenius law.

Keywords

copper; gadolinium compounds; molybdenum compounds; platinum; resistors; semiconductor storage; stability; Arrhenius law; Pt-Cu-MoO_x-GdO_x-Pt; external load resistor; low resistance state; predicted resistance; resistive memory; resistive switching memory; state stability; temperature 200 C to 250 C; temperature 85 C; Resistance random access memory (ReRAM); resistive memory; retention;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2042677

Filename

5433005