DocumentCode
1445149
Title
40 Gbit/s 1.55 μm pin-HEMT photoreceiver monolithically integrated on 3 in GaAs substrate
Author
Hurm, V. ; Benz, W. ; Bronner, W. ; Hülsmann, A. ; Jakobus, T. ; Köhler, K. ; Leven, A. ; Ludwig, M. ; Raynor, B. ; Rosenzweig, J. ; Schlechtweg, M. ; Thiede, A.
Author_Institution
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Volume
34
Issue
21
fYear
1998
fDate
10/15/1998 12:00:00 AM
Firstpage
2060
Lastpage
2062
Abstract
A 36.5 GHz bandwidth, 1.55 μm wavelength pin-HEMT photoreceiver with a distributed amplifier has been monolithically integrated on a 3 in GaAs substrate using a 0.15 μm gate-length pseudomorphic HEMT process. The pin photodiode has a responsivity of 0.34 A/W. Clearly-opened eye diagrams for a 40 Gbit/s optical data stream have been demonstrated
Keywords
III-V semiconductors; distributed amplifiers; gallium arsenide; high electron mobility transistors; integrated optoelectronics; optical receivers; p-i-n photodiodes; 0.15 micron; 1.55 micron; 3 in; 36.5 GHz; 40 Gbit/s; GaAs; GaAs substrate; distributed amplifier; eye diagram; monolithic integration; optical data communication; pin photodiode; pin-HEMT photoreceiver; pseudomorphic HEMT;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981376
Filename
729934
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