Spontaneous and piezoelectric polarization effects on the output characteristics of AlGaN/GaN heterojunction modulation doped FETs

Author

Sacconi, Fabio ; Di Carlo, Aldo ; Lugli, P. ; Morkoç, Hadis

Author_Institution

Dept. of Electr. Eng., Rome Univ., Italy

Volume

48

Issue

3

fYear

2001

fDate

3/1/2001 12:00:00 AM

Firstpage

450

Lastpage

457

Abstract

We report on the calculation of electrical characteristics of AlGaN/GaN heterojunction field effect transistors (HFETs). The model is based on the self-consistent solution of the Schrodinger and Poisson equations coupled to a quasi-2D model for the current flow. Both single and double heterojunction devices are analyzed for [0001] or [000-1] growth directions. The onset of a parasitic p-channel for particular growth directions and alloy concentrations is also shown

Keywords

III-V semiconductors; Poisson equation; Schrodinger equation; aluminium compounds; carrier density; dielectric polarisation; gallium compounds; microwave field effect transistors; microwave power transistors; piezoelectric semiconductors; power HEMT; semiconductor device models; wide band gap semiconductors; AlGaN-GaN; I-V characteristics; Poisson equation; Schrodinger equation; current flow; double heterojunction devices; electrical characteristics; heterojunction MODFET; output characteristics; parasitic p-channel onset; piezoelectric polarization effects; quasi-2D model; self-consistent solution; sheet carrier concentration; single heterojunction devices; spontaneous polarization effects; Aluminum gallium nitride; Epitaxial layers; FETs; Gallium nitride; HEMTs; Heterojunctions; MODFETs; Piezoelectric polarization; Poisson equations; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.906435

Filename

906435