• DocumentCode
    1446455
  • Title

    3-D Numerical Simulation of Bipolar Amplification in Junctionless Double-Gate MOSFETs Under Heavy-Ion Irradiation

  • Author

    Munteanu, Daniela ; Autran, Jean-Luc

  • Author_Institution
    CNRS, IM2NP UMR CNRS 6242,
  • Volume
    59
  • Issue
    4
  • fYear
    2012
  • Firstpage
    773
  • Lastpage
    780
  • Abstract
    The bipolar amplification and charge collection in Junctionless Double-Gate MOSFETs (JL-DGFET) submitted to heavy-ion irradiation are investigated. The transient response of JL-DGFET is compared to that of conventional devices operating in inversion-mode (IM-DGFET). We show that the bipolar amplification is higher in junctionless devices than in conventional inversion-mode devices mainly due to the higher doping levels in the channel which induce larger floating body effects.
  • Keywords
    Doping; Logic gates; MOSFETs; Semiconductor process modeling; Silicon; Transient analysis; Bipolar amplification; double-gate; heavy ion; junctionless transistor; single-event transient;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2012.2184139
  • Filename
    6151201
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1446455