• DocumentCode
    1446530
  • Title

    GaN/SiC p-n mesa junctions for HBTs fabricated using selective photoelectrochemical etching

  • Author

    Graff, J.W. ; Schubert, E.F. ; Osinsky, A.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Boston Univ., MA, USA
  • Volume
    37
  • Issue
    4
  • fYear
    2001
  • fDate
    2/15/2001 12:00:00 AM
  • Firstpage
    249
  • Lastpage
    250
  • Abstract
    GaN/SiC p-n junctions for heterojunction bipolar transistors have been fabricated using photoelectrochemical etching. The process was shown to have excellent selectivity between n- and p-type semiconductors, self-terminating at the p-type SiC layer. Smooth p-SiC surfaces were observed, and contact resistance on the etched surface of 3×10-3Ω·cm2 was achieved. This process has been used in the fabrication of HBTs
  • Keywords
    III-V semiconductors; contact resistance; etching; gallium compounds; heterojunction bipolar transistors; p-n heterojunctions; silicon compounds; wide band gap semiconductors; GaN-SiC; SiC; contact resistance; fabrication; heterojunction bipolar transistors; p-n mesa junctions; photoelectrochemical etching; selectivity; smooth p-SiC surfaces; wet chemical etch; wide band gap semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010150
  • Filename
    907550
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1446530