Title :
Ka-Band 5-Bit MMIC Phase Shifter Using InGaAs PIN Switching Diodes
Author :
Yang, Jung Gil ; Yang, Kyounghoon
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
fDate :
3/1/2011 12:00:00 AM
Abstract :
The design and performance of a Ka-band 5 b MMIC phase shifter using InGaAs PIN switching diodes is presented. In order to achieve low insertion loss and good phase shifting characteristics at Ka-band, a switched reactance type InGaAs PIN-diode phase shifter topology has been employed with a compact bias network. The fabricated InGaAs PIN MMIC phase shifter has demonstrated good performance characteristics such as a low insertion loss of less than 7.8 dB and a high P1 dB of 21.0 dBm compared to the previous results.
Keywords :
MMIC phase shifters; gallium arsenide; indium compounds; p-i-n diodes; InGaAs; Ka-band 5-bit MMIC phase shifter; PIN switching diodes; switched reactance type PIN-diode topology; Frequency measurement; Indium gallium arsenide; Insertion loss; MMICs; Phase measurement; Phase shifters; Switches; InGaAs; Ka-band; MMIC; PIN-diode; phase shifter;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2010.2104314
