Fabrication and testing of solution-processed carbon nanotube thin film transistor

We described fabrication and testing of solution-processed SWCNT TFTs. A back-gated TFT test structure was fabricated by drop-coating SWCNT solution on SiO₂ surface with Au electrodes. Output characteristic and switching characteristic were measured and analyzed. Over 4 decades´ on/off ratio was obtained by using drop-coating at room temperature without any further optimization. Although we use a back-gated test structure, gate leak current was estimated at the level of picoampere. The resultant mobility level was 2×10^-3 cm² V^-1s^-1, which is potential for future applications.