A GaAs MESFET Schottky diode barrier height reference circuit

Author

Taylor, Stewart S.

Author_Institution

TriQuint Semicond. Inc., Hillsboro, OR, USA

Volume

32

Issue

12

fYear

1997

fDate

12/1/1997 12:00:00 AM

Firstpage

2023

Lastpage

2029

Abstract

A barrier height reference voltage has been implemented with Schottky diodes in GaAs MESFET technology. It achieves less than 100 ppm/°C drift and can be used to create a reference voltage for source coupled logic, data converters, and as the basis for a variety of biasing circuits. Moderate accuracy is achieved with a circuit topology that reduces the ratio of control amplifier input voltage to reference voltage. The 7×16 mil² circuit achieves 36 dB of supply rejection, draws 700 μA from 5 V, and is implemented in a 20-GHz ion implanted manufacturing process

Keywords

III-V semiconductors; MESFET circuits; Schottky diodes; data conversion; gallium arsenide; network topology; reference circuits; 20 GHz; 5 V; 700 muA; GaAs; III-V semiconductors; MESFET technology; Schottky diodes; barrier height reference voltage; biasing circuits; circuit topology; control amplifier input voltage; data converters; ion implanted manufacturing process; reference circuit; reference voltage; source coupled logic; supply rejection; Coupling circuits; Gallium arsenide; Logic circuits; MESFET circuits; Photonic band gap; Radio frequency; Schottky diodes; Semiconductor diodes; Temperature; Threshold voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.643660

Filename

643660