A 155-GHz monolithic low-noise amplifier

Author

Wang, Huei ; Lai, Richard ; Kok, Yon-Lin ; Huang, Tian-Wei ; Aust, Michael V. ; Chen, Yaochung C. ; Siegel, Peter H. ; Gaier, Todd ; Dengler, Robert J. ; Allen, Barry R.

Author_Institution

Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA

Volume

46

Issue

11

fYear

1998

fDate

11/1/1998 12:00:00 AM

Firstpage

1660

Lastpage

1666

Abstract

This paper presents the design, fabrication, and test results of a three-stage 155-GHz monolithic low-noise amplifier (LNA) fabricated with the 0.1-μm pseudomorphic (PM) InAlAs-InGaAs-InP HEMT technology. With this amplifier in a test fixture, a small-signal gain of 12 dB was measured at 155 GHz, and more than 10-dB gain from 151 to 156 GHz. When the amplifier was biased for a low noise figure (NF), an NF of 5.1 dB with an associated gain of 10.1 dB was achieved at 155 GHz. All the results above are referred to the monolithic millimetre-wave integrated circuit (MIMIC) chip with the input and output waveguide-to-microstrip line transition losses corrected

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; equivalent circuits; field effect MIMIC; gallium arsenide; indium compounds; integrated circuit design; integrated circuit noise; millimetre wave amplifiers; 0.1 micron; 10.1 to 12 dB; 151 to 156 GHz; 5.1 dB; EHF; InAlAs-InGaAs-InP; MIMIC chip; MM-wave PHEMT; fabrication; low-noise amplifier; monolithic LNA; monolithic millimetre-wave IC; pseudomorphic HEMT technology; three-stage LNA design; transition losses correction; waveguide-to-microstrip line transition; Fabrication; Fixtures; Gain measurement; HEMTs; Low-noise amplifiers; Monolithic integrated circuits; Noise figure; Noise measurement; Testing; Waveguide transitions;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.734551

Filename

734551