Title :
A new extraction method for the two-parameter FET temperature noise model
Author :
Garcia, Mikael ; Stenarson, Jörgen ; Yhland, Klas ; Zirath, Herbert ; Angelov, Ilcho
Author_Institution :
Dept. of Microwave Technol., Chalmers Univ. of Technol., Goteborg, Sweden
fDate :
11/1/1998 12:00:00 AM
Abstract :
This paper presents a direct extraction method for the associated noise temperatures Td and Tg in the field-effect transistor (FET) temperature noise model. The method is related to nodal analysis of circuits. Td and Tg are extracted from the small-signal model parameters and the noise parameters of the device. It is also theoretically shown that there exist source admittances that cancel the thermal noise contribution at the output from either Td or Tg in the model. Finally, a commercially available GaAs pseudomorphic high electron-mobility transistor (pHEMT) is measured and modeled for a wide range of bias points. Comparisons between measured and modeled noise parameters are presented in the 2-26 GHz frequency range
Keywords :
electric admittance; equivalent circuits; gallium arsenide; high electron mobility transistors; microwave field effect transistors; semiconductor device models; semiconductor device noise; thermal noise; 2 to 26 GHz; GaAs; SHF; bias points; direct extraction method; field-effect transistor; high electron-mobility transistor; noise temperatures; pHEMT; pseudomorphic HEMT; small-signal model parameters; source admittances; temperature noise model; thermal noise contribution; two-parameter FET model; Admittance; Circuit noise; FETs; Frequency measurement; Gallium arsenide; Microwave technology; Noise cancellation; Noise measurement; PHEMTs; Temperature;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
