Title :
Selective writing of sub-μm2 domain in spin valve strip with current coincident scheme
Author :
Matsuyama, K. ; Murashima, N. ; Higashidani, M. ; Nozaki, Y.
Author_Institution :
Dept. of Electron. Device Eng., Kyushu Univ., Fukuoka, Japan
fDate :
9/1/2000 12:00:00 AM
Abstract :
Cooperative nucleation of sub-μm2 domains has been performed for a spin valve strip (0.4 μm width) of NiFe/Co/Cu/Co overlaid with orthogonal two-layer conductors (write and assist conductors). The current induced MR change due to the write current I w markedly increases with the additional assist current Ia. Threshold value of I, required for domain nucleation was decreased from 15 mA/μm to 9 mA/μm by the application of Ia with an amplitude of 10 mA/μm, which confirms selective writing with the current coincident scheme. The cooperative effect disappears, when the phase difference between Iw and Ia becomes larger than the pulse width of 30 ns. Which can be associated with the fast relaxation time of the magnetization process in the sub-μm2 region
Keywords :
cobalt; copper; ferromagnetic materials; giant magnetoresistance; iron alloys; magnetic domains; magnetic recording; magnetisation; nickel alloys; random-access storage; spin valves; 0.4 mum; 30 ns; NiFe-Co-Cu-Co; NiFe/Co/Cu/Co; assist conductors; cooperative nucleation; current coincident scheme; current induced MR change; domain; domain nucleation; fast relaxation time; magnetization process; orthogonal two-layer conductors; phase difference; selective writing; spin valve strip; threshold; write conductors; Conducting materials; Conductors; Iron; Magnetic domains; Magnetic switching; Magnetization; Space vector pulse width modulation; Spin valves; Strips; Writing;
Journal_Title :
Magnetics, IEEE Transactions on
