Title :
Dynamic switching of tunnel junction MRAM cell with nanosecond field pulses
Author :
Sousa, Ricardo C. ; Freitas, Paulo P.
Author_Institution :
INESC, Lisbon, Portugal
fDate :
9/1/2000 12:00:00 AM
Abstract :
Spin dependent tunnel junctions aimed for the storage element in MRAM cells were switched between low and high resistance states using 20 ns current pulses on two perpendicular conductors. Switching was done in the quasi static mode using an external field and dynamically with field pulses created on chip, For 20 ns pulse widths the introduction of a delay between the two pulses promotes the switching at lower fields and reduces the dispersion in remanent resistance values after switching
Keywords :
magnetic switching; magnetisation reversal; magnetoresistive devices; random-access storage; tunnelling; 20 ns; dispersion; dynamic switching; external field; high resistance state; low resistance state; nanosecond field pulses; perpendicular conductors; quasi static mode; remanent resistance; spin dependent tunnel junctions; storage element; switching; tunnel junction MRAM cell; Delay; Electrical resistance measurement; Electrodes; Insulation; Magnetic anisotropy; Magnetic field measurement; Magnetic switching; Magnetic tunneling; Perpendicular magnetic anisotropy; Pulse measurements;
Journal_Title :
Magnetics, IEEE Transactions on
