Title :
A new empirical I-V model for HEMT devices
Author :
Chen, Y.C. ; Ingram, D.L. ; Yen, H.C. ; Lai, R. ; Streit, D.C.
Author_Institution :
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
fDate :
10/1/1998 12:00:00 AM
Abstract :
We have developed a new empirical model to represent the current-voltage (I-V) characteristics of HEMT devices. This model is simple and yet capable of representing the HEMT I-V characteristics with high accuracy. Excellent modeling of the measured drain current, its first (transconductance), second, and third derivatives with respect to gate voltage for multiple drain biases is demonstrated. A simple model extraction procedure has been developed and is described in the letter
Keywords :
high electron mobility transistors; semiconductor device models; HEMT; current-voltage characteristics; drain current; empirical model; parameter extraction; transconductance; Circuit simulation; Current measurement; Curve fitting; Data mining; Equations; HEMTs; MESFETs; Performance evaluation; Power amplifiers; Voltage;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
