Title :
Vertically Coupled Quantum-Dot Infrared Photodetectors
Author :
Lo, Ming-Cheng ; Wang, Shiang-Yu ; Ling, Hong-Shi ; Lee, Chien-Ping
Author_Institution :
Dept. of Electr. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
6/1/2010 12:00:00 AM
Abstract :
Vertically coupled InAs-GaAs quantum-dot infrared photodetectors (QDIPs) were studied in this letter. With vertically coupled quantum dots (QDs), the QDs in the same column share the same electronic states which remove the QD size variation effect in the growth direction and result in a narrow response band and higher peak quantum efficiency. The coupled states increase the capture probability and also facilitate the carrier flow among QD layers. The frequency response of vertically coupled QDIPs is much faster than that of the conventional ones.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor quantum dots; InAs-GaAs; capture probability; carrier flow; coupled states; electronic states; frequency response; growth direction; narrow response band; vertically coupled quantum-dot infrared photodetectors; Infrared detectors; photodetectors; quantum dots (QDs); quantum effect semiconductor devices;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2010.2046030
