Title :
Zinc Oxide Thin-Film Transistors with Location-Controlled Crystal Grains Fabricated by Low-Temperature Hydrothermal Method
Author :
Cheng, Huang-Chung ; Yang, Po-Yu ; Wang, Jyh-Liang ; Agarwal, Sanjay ; Tsai, Wei-Chih ; Wang, Shui-Jinn ; Lee, I-Che
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
4/1/2011 12:00:00 AM
Abstract :
High-performance zinc oxide (ZnO) bottom-gate (BG) thin-film transistors (TFTs) with a single vertical grain boundary in the channel have been successfully fabricated by a novel low-temperature (i.e., 85°C) hydrothermal method. The ZnO active channel was laterally grown with an aluminum-doped ZnO seed layer underneath the Ti/Pt film. Consequently, such BG-TFTs (W/L = 250 μm/10 μm) demonstrated the high field-effect mobility of 9.07 cm2/V - s, low threshold voltage of 2.25 V, high on/off-current ratio above 106, superior current drivability, indistinct hysteresis phenomenon, and small standard deviations among devices, attributed to the high-quality ZnO channel with the single grain boundary.
Keywords :
platinum; thin film transistors; titanium; zinc compounds; Ti-Pt; ZnO; bottom-gate thin-film transistors; current drivability; indistinct hysteresis phenomenon; location-controlled crystal grains; low-temperature hydrothermal method; single vertical grain boundary; size 10 mum; size 250 mum; temperature 85 degC; voltage 2.25 V; Grain boundaries; Iron; Logic gates; Thin film transistors; Zinc oxide; Hydrothermal method; lateral grain growth; thin-film transistor (TFT); zinc oxide (ZnO);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2103921
