GaInP/AlGaAs/GaInP double heterojunction bipolar transistors with zero conduction band spike at the collector

Author

Lye, Beng-Chye ; Houston, P.A. ; Yow, Ho-Kwang ; Button, C.C.

Author_Institution

Dept. of Electron. & Electr. Eng., Sheffield Univ., UK

Volume

45

Issue

12

fYear

1998

fDate

12/1/1998 12:00:00 AM

Firstpage

2417

Lastpage

2421

Abstract

Al_0.11Ga_0.89As was used in the base, next to the GaInP collector of a DHBT, to eliminate the conduction band spike. The DHBT´s demonstrated high breakdown voltages, BV_CEO and BV _CBO of 44.5 V and 54.5 V (gain≈20), respectively, for a 1-μm-thick collector doped to 2×10¹⁶ cm^-3 with no voltage dependence of the current gain. Magneto-transport measurements were made on the AlGaAs bases and indicated limitations on the maximum practical base doping due to the inferior minority electron mobility and lifetime when compared with equivalently doped GaAs. Grading in the base from Al_0.11Ga_0.89As at the collector to Al_0.21Ga_0.79As at the emitter introduced a quasielectric field in the base, reduced the base transit time by a factor of ~2.5, and improved the gain over ungraded devices with the same average Al concentration

Keywords

III-V semiconductors; aluminium compounds; carrier lifetime; conduction bands; electron mobility; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; minority carriers; semiconductor device breakdown; GaInP-AlGaAs-GaInP; GaInP/AlGaAs/GaInP double heterojunction bipolar transistor; base doping; base transit time; breakdown voltage; collector; conduction band spike; current gain; magnetotransport; minority electron lifetime; minority electron mobility; quasielectric field; Bipolar transistors; Breakdown voltage; Doping; Double heterojunction bipolar transistors; Electron mobility; Epitaxial growth; Gallium arsenide; Heterojunction bipolar transistors; Microwave devices; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.735717

Filename

735717