Title :
Flexible Low-Voltage Electric-Double-Layer TFTs Self-Assembled on Paper Substrates
Author :
Lu, Aixia ; Dai, Mingzhi ; Sun, Jia ; Jiang, Jie ; Wan, Qing
Author_Institution :
Ningbo Inst. of Mater. Technol. & Eng., Chinese Acad. of Sci., Ningbo, China
fDate :
4/1/2011 12:00:00 AM
Abstract :
Flexible low-voltage electric-double-layer (EDL) thin-film transistors (TFTs) with a patterned indium-tin-oxide (ITO) channel are self-assembled on paper substrates by only one shadow mask at room temperature. The operation voltage is 1.5 V when a microporous SiO2 solid electrolyte with large EDL capacitance is used as the gate dielectric. Such flexible TFTs operate in a full-depletion mode with a high mobility of 25.5 cm2/V · s, a low subthreshold swing of 0.16 V/decade, and a high current on/off ratio of 3 × 105. The influence of mechanical bending to the electrical performance of the flexible EDL TFTs is investigated. A device simulator is used to simulate the electrical behavior, and a nice fitting to the experimental data is obtained.
Keywords :
electric properties; electrochemistry; flexible electronics; low-power electronics; paper; self-assembly; substrates; thin film transistors; flexible low-voltage electric-double-layer TFT; gate dielectric; mechanical bending; paper substrates; self-assembly; thin-film transistors; Capacitance; Dielectrics; Indium tin oxide; Logic gates; Substrates; Thin film transistors; Flexible electric-double-layer (EDL) transistors; one-mask self-assembled; paper electronics;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2107550
