Analysis of electric field effect in quantum box structure and its application to low-loss intersectional type optical switch

Author

Ravikumar, K.G. ; Aizawa, Takuya ; Matsubara, Katsuaki ; Asada, Masahiro ; Suematsu, Yasuharu

Volume

9

Issue

10

fYear

1991

fDate

10/1/1991 12:00:00 AM

Firstpage

1376

Lastpage

1385

Abstract

The electric field induced refractive-index variation and the refractive-index variation-absorption loss variation ratio in a GaInAs/InP quantum box (QB) structure are analyzed and applied to an intersectional type optical switch. The large index variation of a few percent with low absorption characteristics in a QB structure, is found to be very useful to decrease the insertion loss at both the ON and OFF state of a QB intersectional-type optical switch. It is shown that in such a switch the loss can be decreased to less than 1 dB. The QB size dependence and fluctuations in QB size on QB-intersectional type optical switch are also discussed

Keywords

III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; integrated optics; optical losses; refractive index; semiconductor quantum dots; semiconductor switches; 1 dB; GaInAs-InP; OFF state; ON state; absorption loss variation; electric field effect; fluctuations; insertion loss; low absorption characteristics; low-loss intersectional type optical switch; quantum box structure; refractive-index variation; semiconductors; size dependence; Absorption; Communication switching; Conducting materials; Indium phosphide; Insertion loss; Optical losses; Optical modulation; Optical refraction; Optical switches; Switching circuits;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.90936

Filename

90936