Low threshold MBE-grown AlInGaAs/AlGaAs strained multiquantum-well lasers by rapid thermal annealing

Author

Ko, J. ; Chen, C.H. ; Coldren, L.A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

32

Issue

22

fYear

1996

fDate

10/24/1996 12:00:00 AM

Firstpage

2099

Lastpage

2100

Abstract

With post-growth rapid thermal annealing (RTA), 824 nm strained Al _0.15In_0.25Ga_0.6As multiquantum-well (MQW) lasers grown by solid source molecular beam epitaxy (MBE) showed a record low threshold current density of 83 A/cm² per well. Ridge waveguide lasers fabricated from the same material exhibited pulsed threshold current of 5 mA and 62% external quantum efficiency without facet coating. In addition, 1.4 K photoluminescence (PL) study suggests that RTA is very effective in removing nonradiative centres in the active region

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; laser transitions; molecular beam epitaxial growth; photoluminescence; quantum well lasers; rapid thermal annealing; ridge waveguides; waveguide lasers; 5 mA; 62 percent; 824 nm; Al_0.15In_0.25Ga_0.6As-AlGaAs; PL study; low threshold MBE-grown lasers; molecular beam epitaxy; multiquantum-well lasers; photoluminescence study; post-growth RTA; rapid thermal annealing; ridge waveguide lasers; solid source MBE; strained MQW lasers; threshold current density;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19961378

Filename

543840