DocumentCode :
1452707
Title :
Effect of Metallic Composition on Electrical Properties of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors
Author :
Kim, Yong-Hoon ; Han, Min-Koo ; Han, Jeong-In ; Park, Sung Kyu
Author_Institution :
Flexible Display Res. Center, Korea Electron. Technol. Inst., Seongnam, South Korea
Volume :
57
Issue :
5
fYear :
2010
fDate :
5/1/2010 12:00:00 AM
Firstpage :
1009
Lastpage :
1014
Abstract :
We report the combinatorial study on surface morphology and electrical properties of solution-processed amorphous indium-gallium-zinc-oxide (a- IGZO) thin-film transistors (TFTs). The sol-gel-processed a-IGZO thin films typically have shown an amorphous structure and critical dependence of mobility, carrier concentration, and surface roughness on the In, Ga, and Zn molar ratio in the solution phase. Based on efficient control of the metallic components from the sol-gel process, the solution-processed a- IGZOT FTs with a mobility of 0.5-2 cm2/V ·s, on/off current ratio > 107, and a subthreshold slope of as steep as 1.5 V/dec were obtained.
Keywords :
II-VI semiconductors; amorphous semiconductors; carrier density; carrier mobility; gallium compounds; indium compounds; semiconductor growth; semiconductor thin films; sol-gel processing; surface morphology; surface roughness; thin film transistors; wide band gap semiconductors; zinc compounds; InGaZnO; amorphous structure; amorphous thin-film transistors; carrier concentration; electrical properties; metallic composition; molar ratio; sol-gel process; solution phase; surface morphology; surface roughness; Amorphous materials; Displays; Electrodes; Rough surfaces; Spinning; Surface morphology; Surface roughness; Temperature; Thin film transistors; Water; $a$-IGZO ; metallic composition; solution-process; thin-film transistor;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2010.2043179
Filename :
5438779
Link To Document :
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