A 1-Gb/s monolithically integrated silicon NMOS optical receiver

Author

Schow, C.L. ; Schaub, J.D. ; Li, R. ; Qi, J. ; Campbell, J.C.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

Volume

4

Issue

6

fYear

1998

Firstpage

1035

Lastpage

1039

Abstract

We report a monolithically integrated optical receiver consisting of a silicon NMOS transimpedance preamplifier paired with a lateral, interdigitated p-i-n photodiode. The photodiode´s quantum efficiency was 82% at 850 nm, and it exhibited a dark current of 300 pA at -30 V. At the optimal operating point, the preamplifier achieved a bandwidth of 500 MHz, a transimpedance of 51.4 dB·Ω and dissipated only 10.8 mW of power at a power supply voltage of 1.8 V. At a bit-error-rate of 10^-9, the receiver exhibited sensitivities of -22.8, -15.0, and -9.3 dBm at bit rates of 622 Mb/s, 900 Mb/s, and 1 Gb/s, respectively

Keywords

MOS integrated circuits; dark conductivity; integrated optoelectronics; optical receivers; p-i-n photodiodes; preamplifiers; sensitivity; silicon; 1 Gbit/s; 1.8 V; 10.8 mW; 30 V; 300 pA; 622 Mbit/s; 82 percent; 850 nm; 900 Mbit/s; Gb/s monolithically integrated silicon NMOS optical receiver; Si; bit-error-rate; dark current; lateral interdigitated p-i-n photodiode; monolithically integrated optical receiver; optimal operating point; photodiode quantum efficiency; preamplifier; receiver sensitivities; silicon NMOS transimpedance preamplifier; supply voltage; transimpedance; Bandwidth; Bit rate; Dark current; MOS devices; Optical receivers; PIN photodiodes; Power supplies; Preamplifiers; Silicon; Voltage;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.736109

Filename

736109