Characterization of mass-transported p-substrate GaInAsP/InP buried-heterostructure lasers with analytical solutions for electrical and thermal resistances

Studies have been carried out to evaluate mass-transported p-substrate GaInAsP/InP buried-heterostructure lasers, which have a number of potential advantages over the more conventional n-substrate lasers. Devices have been fabricated with series resistances as low as 3 Omega , in good agreement with the p-substrate spreading resistance calculated using conformal mapping. A further development of this theory yields simple formulas of thermal resistances of heat generated both in the active region and in the p-InP. The presently fabricated p-substrate lasers also showed CW threshold currents as low as 4.5 mA, differential quantum efficiencies as high as 34% per facet, output powers as high as 33 mW per facet, and a maximum total electrical-to-optical power conversion efficiency of 36%.<>