DocumentCode
1453030
Title
80-kW inductive pulsed power system with a photoconductive semiconductor switch
Author
Funk, E.E. ; Chauchard, E.A. ; Rhee, M.J. ; Lee, Chi H.
Author_Institution
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Volume
3
Issue
6
fYear
1991
fDate
6/1/1991 12:00:00 AM
Firstpage
576
Lastpage
577
Abstract
The performance of the GaAs photoconductive semiconductor switch (PCSS) has been optimized in the current-charged transmission-line configuration to produce a power gain of 45 with an output pulse of 80 kW. The fast falltime of the switch resistance produced by the specially tailored optical pulse that actives the PCSS is mainly responsible for the high power gain achieved. An effect similar to lock-on was found to limit the output voltage to approximately 2 kV.<>
Keywords
III-V semiconductors; gallium arsenide; optical communication equipment; optical switches; photoconducting devices; semiconductor switches; 2 kV; 80 kW; GaAs; current-charged transmission-line configuration; fast falltime; inductive pulsed power system; photoconductive semiconductor switch; power gain; semiconductors; switch resistance; tailored optical pulse; Capacitors; Gallium arsenide; Optical pulses; Optical switches; Photoconducting devices; Power semiconductor switches; Power transmission lines; Pulse amplifiers; Pulse power systems; Voltage;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.91040
Filename
91040
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