Optoelectronic switches and multigigabit 8:1 time multiplexer

Author

Chang, C.T. ; Albares, D.J. ; Imthurn, G.P. ; Ogden, T.R. ; Taylor, M.J. ; Garcia, G.A.

Author_Institution

Dept. of Electr. & Comput. Eng., San Diego State Univ., CA, USA

Volume

37

Issue

9

fYear

1990

fDate

9/1/1990 12:00:00 AM

Firstpage

1969

Lastpage

1975

Abstract

Optoelectronic metal-semiconductor-metal (MSM) switches in InP were studied and used as sampling elements in a digital time division multiplexer. It was found that switch performance can range from the depletion-layer photodiode to the photoconductor regime as the activating light intensity increases. The multiplexer had an 8:1 ratio, a 2-V signal bias, >25-dB S/N, and a serial rate of at least 2.5 Gb/s. This multiplexer with its high S/N and the timing stability intrinsic to fiber delay lines will be advantageous for high-speed digital communications

Keywords

III-V semiconductors; indium compounds; metal-semiconductor-metal structures; multiplexing equipment; optical communication equipment; optical switches; photoconducting devices; photodiodes; semiconductor switches; time division multiplexing; 2.5 Gbit/s; InP; depletion-layer photodiode; digital time division multiplexer; fiber delay lines; high-speed digital communications; light intensity; multigigabit 8:1 time multiplexer; optoelectronic switches; photoconductor regime; sampling elements; serial rate; switch performance; timing stability; Delay lines; Indium phosphide; Multiplexing; Optical fiber communication; Photoconductivity; Photodiodes; Sampling methods; Stability; Switches; Timing;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.57158

Filename

57158