Long-wavelength In/sub 0.53/Ga/sub 0.47/As metamorphic p-i-n photodiodes on GaAs substrates

Author

Jang, J.H. ; Cueva, G. ; Dumka, D.C. ; Hoke, W.E. ; Lemonias, P.J. ; Adesida, I.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

13

Issue

2

fYear

2001

fDate

2/1/2001 12:00:00 AM

Firstpage

151

Lastpage

153

Abstract

Metamorphic In/sub 0.53/Ga/sub 0.47/As p-i-n photodiodes on GaAs substrate exhibiting the lowest dark current ever reported were fabricated and characterized. Their dark current, DC and RF performances were measured and compared for devices of different sizes. Typical dark current for 15-μm-diameter devices was 600 pA under 5-V reverse bias, corresponding to a dark current density of 3.40×10/sup -4/ A/cm². Typical responsivity measured with 1.55-μm optical radiation was 0.55 A/W corresponding to an external quantum efficiency of 44%. The electrical 3 dB bandwidths of the photodiodes with diameters smaller than 20 μm were over 20 GHz.

Keywords

III-V semiconductors; current density; dark conductivity; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical fabrication; photodiodes; 1.55 mum; 15 mum; 20 GHz; 20 mum; 44 percent; 5 V; 600 pA; DC performance; GaAs; GaAs substrates; In/sub 0.53/Ga/sub 0.47/As; RF performance; characterization; dark current; dark current density; electrical bandwidths; external quantum efficiency; fabrication; long-wavelength photodiodes; metamorphic p-i-n photodiodes; optical radiation; p-i-n photodiodes; photodiodes; responsivity; reverse bias; Bandwidth; Dark current; Gallium arsenide; HEMTs; Indium phosphide; MODFETs; PIN photodiodes; Photodetectors; Radio frequency; Substrates;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.910518

Filename

910518