Modeling Inter-Device Leakage in 90 nm Bulk CMOS Devices

Author

Esqueda, Ivan S. ; Barnaby, Hugh J. ; Holbert, Keith E. ; Boulghassoul, Younes

Author_Institution

Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA

Volume

58

Issue

3

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

793

Lastpage

799

Abstract

We demonstrate an analytical modeling approach that captures the effects of total ionizing dose (TID) on the I_d -V_gs characteristics of field-oxide-field-effect-transistors (FOXFETs) fabricated in a low-standby power commercial bulk CMOS technology. Radiation-enabled technology computer aided design (TCAD) simulations and experimental data allow validating the model against technological parameters such as doping concentration, field-oxide thickness, and geometry. When used in conjunction with the closed-form expressions for the surface potential, the analytical models for fixed oxide charge and interface trap density enables accurate modeling of radiation-induced degradation of the FOXFET I_d -V_gs characteristics allowing the incorporation of TID into surface potential based compact models.

Keywords

CMOS integrated circuits; electrical faults; field effect transistors; low-power electronics; semiconductor device models; surface potential; FOXFET; TCAD simulation; TID; closed-form expression; doping concentration; experimental data; field-oxide thickness; fixed oxide charge; fleld-oxide-fleld-effect-transistor; geometry; interdevice leakage modeling; interface trap density; low-standby power commercial bulk CMOS technology; radiation-enabled technology computer aided design simulation; radiation-induced degradation; size 90 nm; surface potential; total ionizing dose; Analytical models; Charge carrier processes; Logic gates; Mathematical model; Protons; Radiation effects; Semiconductor device modeling; Analytical models; CMOS; field oxide field effect transistors (FOXFETs); total ionizing dose (TID);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2010.2101616

Filename

5715907