Title :
Modeling Inter-Device Leakage in 90 nm Bulk CMOS Devices
Author :
Esqueda, Ivan S. ; Barnaby, Hugh J. ; Holbert, Keith E. ; Boulghassoul, Younes
Author_Institution :
Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA
fDate :
6/1/2011 12:00:00 AM
Abstract :
We demonstrate an analytical modeling approach that captures the effects of total ionizing dose (TID) on the Id -Vgs characteristics of field-oxide-field-effect-transistors (FOXFETs) fabricated in a low-standby power commercial bulk CMOS technology. Radiation-enabled technology computer aided design (TCAD) simulations and experimental data allow validating the model against technological parameters such as doping concentration, field-oxide thickness, and geometry. When used in conjunction with the closed-form expressions for the surface potential, the analytical models for fixed oxide charge and interface trap density enables accurate modeling of radiation-induced degradation of the FOXFET Id -Vgs characteristics allowing the incorporation of TID into surface potential based compact models.
Keywords :
CMOS integrated circuits; electrical faults; field effect transistors; low-power electronics; semiconductor device models; surface potential; FOXFET; TCAD simulation; TID; closed-form expression; doping concentration; experimental data; field-oxide thickness; fixed oxide charge; fleld-oxide-fleld-effect-transistor; geometry; interdevice leakage modeling; interface trap density; low-standby power commercial bulk CMOS technology; radiation-enabled technology computer aided design simulation; radiation-induced degradation; size 90 nm; surface potential; total ionizing dose; Analytical models; Charge carrier processes; Logic gates; Mathematical model; Protons; Radiation effects; Semiconductor device modeling; Analytical models; CMOS; field oxide field effect transistors (FOXFETs); total ionizing dose (TID);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2010.2101616
