Title :
Method to determine intrinsic and extrinsic base-collector capacitance of HBTs directly from bias-dependent S-parameter data
Author :
Hattendorf, Michael ; Scott, Dennis ; Yang, Qinghong ; Feng, Milton
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
3/1/2001 12:00:00 AM
Abstract :
This letter presents a novel small-signal model extraction procedure which determines intrinsic and extrinsic base-collector capacitance (C/sub bci/ and C/sub bex/, respectively) directly from S-parameter data. The procedure utilizes physical assumptions shout the bias dependence of small-signal parameters. The model is validated on several InGaP/GaAs HBTs with different layouts, and the extraction results are discussed. The small-signal model is physical, produces excellent S-parameter fits, and may be used to derive a compact large-signal model.
Keywords :
III-V semiconductors; S-parameters; capacitance; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device models; InGaP-GaAs; InGaP/GaAs HBT; S-parameter; bias dependence; extrinsic base-collector capacitance; intrinsic base-collector capacitance; parameter extraction; small-signal model; Area measurement; Capacitance; Cutoff frequency; Data mining; Electrons; Frequency measurement; Gallium arsenide; Heterojunction bipolar transistors; Impedance measurement; Optimization methods;
Journal_Title :
Electron Device Letters, IEEE
