Title :
Dual-wavelength asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector lasers
Author :
Roh, S.D. ; Swint, R.B. ; Jones, A.M. ; Yeoh, T.S. ; Huber, A.E. ; Hughes, J.S. ; Coleman, J.J.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
The design and operation of dual-wavelength InGaAs-GaAs asymmetric cladding ridge waveguide distributed Bragg reflector (DBR) lasers are reported. DBR lasers with mode pair separations of 4.1, 8.4, and 16.9 nm exhibit stable, simultaneous, dual-wavelength operation in current ranges of 40-52 mA, 32-42 mA, and 28-35 mA, respectively. Within the stated current ranges, all lasing modes exhibit at least 20-dB sidemode suppression, and approximately 30-dB sidemode suppression under optimum operating conditions.
Keywords :
III-V semiconductors; claddings; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser modes; optical design techniques; ridge waveguides; semiconductor lasers; symmetry; waveguide lasers; 28 to 35 mA; 40 to 52 mA; 42 to 32 mA; DBR lasers; InGaAs-GaAs; dual-wavelength asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector lasers; lasing modes; mode pair separations; optimum operating conditions; sidemode suppression; stable simultaneous dual-wavelength operation; stated current ranges; Distributed Bragg reflectors; Gratings; Laser modes; Laser tuning; Optical coupling; Optical modulation; Optical sensors; Optical waveguides; Semiconductor lasers; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
