The effect of increased valence band offset on the operation of 2 μm GaInAsSb-AlGaAsSb lasers

Author

Newell, T. ; Wu, X. ; Gray, A.L. ; Dorato, S. ; Lee, H. ; Lester, L.F.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

Volume

11

Issue

1

fYear

1999

Firstpage

30

Lastpage

32

Abstract

Two and four quantum-well (QW) GaInAsSb-AlGaAsSb lasers emitting at 2 μm are reported. In comparison to previously published data, it is found that higher Al content in the QW barrier improves the internal efficiency, saturated modal gain, and characteristic temperature of the lasers. These results are attributed to an increased valence band offset that provides superior hole confinement in the GaInAsSb QW. A differential efficiency of 74% is observed at 25/spl deg/C under pulsed conditions for a 900-μm cavity length, 2-QW device, and a record characteristic temperature of 140 K is measured for a 4-QW laser.

Keywords

Debye temperature; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser cavity resonators; laser transitions; quantum well lasers; valence bands; 140 K; 2 mum; 25 C; 74 percent; 900 micron; Al content; GaInAsSb QW; GaInAsSb-AlGaAsSb; GaInAsSb-AlGaAsSb lasers; QW barrier; cavity length; characteristic temperatur; differential efficiency; hole confinement; increased valence band offset; internal efficiency; pulsed conditions; quantum-well lasers; saturated modal gain; valence band offset; Capacitive sensors; Laboratories; Laser modes; Power lasers; Pulse measurements; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.736380

Filename

736380