Inversion layer mobility of MOSFETs with nitrided oxide gate dielectrics

Author

Schmidt, Martin A. ; Terry, Fred L. ; Mathur, Bimal P. ; Senturia, Stephen D.

Author_Institution

MIT Lincoln Lab., Lexington, MA, USA

Volume

Issue

fYear

1988

fDate

10/1/1988 12:00:00 AM

Firstpage

1627

Lastpage

1632

Abstract

Reports a degradation in effective channel mobility with increasing degree of nitridation, as much as 50% for electrons, noticeably less for holes. While both hole and electron mobilities are degraded by Coulombic scattering from nitridation-induced fixed charge, the additional mobility degradation for electrons is attributed to a reduction of the mobile electron density by electron trapping in near-interface traps and to additional Coulombic scattering of the remaining channel electrons by the trapped electrons

Keywords

carrier mobility; electron traps; insulated gate field effect transistors; Coulombic scattering; MOSFETs; effective channel mobility; electron mobilities; hole mobility; inversion layer mobility; mobility degradation; near-interface traps; nitridation; nitrided oxide gate dielectrics; Annealing; Charge carrier processes; Degradation; Dielectrics; Electron mobility; Electron traps; Implants; Laboratories; MOSFETs; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.7364

Filename

7364

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1454681