Inversion layer mobility under high normal field in nitrided-oxide MOSFETs

Author

Hori, Takashi

Author_Institution

Matsushita Electric Ind. Co. Ltd., Osaka, Japan

Volume

37

Issue

9

fYear

1990

fDate

9/1/1990 12:00:00 AM

Firstpage

2058

Lastpage

2069

Abstract

A comprehensive study on the inversion layer mobility improvement of n-channel MOSFETs with nanometer-range ultra-thin (reoxidized) nitrided oxides is presented. The performance improvement is described from both the device physics modeling and device/circuit design points of view by using the various kinds of current drivability and mobility data over wide ranges of gate drive and E_eff. The nitridation- and reoxidation-condition dependencies of the mobility values are extensively reported. A mechanism for improvement is discussed in conjunction with the observed results of Auger electron spectroscopy, capacitance-voltage measurements, hole mobility measurements of p-channel MOSFETs, and transmission electron microscopy. The (reoxidized) nitrided oxides were fabricated fully by rapid thermal processing instead of conventional quartz-tube furnace annealing, whose major drawback is a considerable redistribution of dopant impurities

Keywords

Auger effect; carrier mobility; high field effects; incoherent light annealing; insulated gate field effect transistors; inversion layers; semiconductor device models; surface treatment; transmission electron microscope examination of materials; Auger electron spectroscopy; Si-SiO_xN_y; capacitance-voltage measurements; current drivability; device physics modeling; device/circuit design; gate drive; high normal field; hole mobility; inversion layer mobility; n-channel MOSFETs; nitridation condition; p-channel MOSFETs; rapid thermal processing; reoxidation-condition dependencies; transmission electron microscopy; Capacitance measurement; Capacitance-voltage characteristics; Charge carrier processes; Circuit synthesis; Electron mobility; MOSFETs; Physics; Rapid thermal processing; Spectroscopy; Transmission electron microscopy;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.57169

Filename

57169