Title :
Effects of Design Geometries and Nonlinear Losses on Gain in Silicon Waveguides With Erbium-Doped Regions
Author :
Qian, Feng ; Song, Qi ; Tien, En-Kuang ; Kalyoncu, Salih K. ; Huang, Yuewang ; Boyraz, Ozdal
Author_Institution :
Electr. & Comput. Sci. Dept., Univ. of California, Irvine, CA, USA
fDate :
3/1/2011 12:00:00 AM
Abstract :
Silicon waveguides integrated with doped dielectric gain media may allow the design of planar light sources with electronic control. In this paper, the effects of design geometries and nonlinear losses on the gain in crystalline silicon waveguides with erbium-doped regions are investigated. We show that by using multitrench geometries, the power confinement can be increased and higher gain-to-nonlinear-loss ratio achieved. Net gain can be improved as much as 0.38 dB/cm in multitrench waveguides compared to single-trench waveguides.
Keywords :
elemental semiconductors; erbium; integrated optics; nonlinear optics; optical design techniques; optical losses; optical waveguides; silicon; JkJk:Er-Si; design geometries; doped dielectric gain media; electronic control; erbium doping; gain-to-nonlinear-loss ratio; integrated silicon waveguides; multitrench geometries; multitrench waveguides; nonlinear losses; planar light sources; power confinement; single-trench waveguides; Absorption; Aluminum oxide; Erbium; Gain; Geometry; Optical waveguides; Silicon; Erbium; integrated optics; laser amplifiers; waveguides;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2010.2088379
