Title :
Mechanism for Modulation Response Improvement in Mutually Injection-Locked Semiconductor Lasers
Author :
Yang, Zhenshan ; Tauke-Pedretti, Anna ; Vawter, G. Allen ; Chow, Weng W.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fDate :
3/1/2011 12:00:00 AM
Abstract :
The modulation response (MR) improvement in mutually injection-locked semiconductor lasers is analyzed. We show that the system becomes increasingly sensitive to the modulation when its operation point approaches the lock band boundary, suggesting that the MR enhancement results from a modulation-induced transition between locked and unlocked operations of the laser system.
Keywords :
laser mode locking; optical modulation; semiconductor lasers; injection-locked semiconductor lasers; lock band boundary; modulation response; modulation-induced transition; unlocked operations; Cavity resonators; Frequency modulation; Laser excitation; Vertical cavity surface emitting lasers; High-speed lasers; injection-locking; semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2010.2083638
