Title :
Determination of the spatial variation of the carrier lifetime in a proton-irradiated Si n+-n-p+ diode by optical-beam-induced current measurements
Author :
Flohr, Thomas ; Helbig, Reinhard
Author_Institution :
Siemens AG, Erlangen, West Germany
fDate :
9/1/1990 12:00:00 AM
Abstract :
It is shown that the local carrier diffusion length can be obtained from optical-beam-induced current (OBIC) measurements on a diode structure with the p-n junction perpendicular to the surface by evaluating the local slope of the OBIC signal, when the light penetration depth is sufficient and when the sample can be considered semi-infinite. The method is applied to several n+-n-p+ diodes which were proton-irradiated at various proton fluxes. The measured lifetime profiles after proton irradiation are found to agree very well with defect profiles
Keywords :
carrier lifetime; elemental semiconductors; proton effects; radiation effects; semiconductor device testing; semiconductor diodes; silicon; OBIC signal; Si; carrier lifetime; defect profiles; light penetration depth; local carrier diffusion length; n+-n-p+ diode; optical-beam-induced current; proton fluxes; proton irradiation; spatial variation; Charge carrier lifetime; Current measurement; Diodes; Distributed power generation; Gold; Helium; Length measurement; Metallization; P-n junctions; Protons;
Journal_Title :
Electron Devices, IEEE Transactions on
