On the fall time of silicon planar transistors with constant base current drive

In the active region transient response of a transistor in common emitter configuration with constant base current drive, there is some discrepancy in theoretically predicted and experimentally observed fall time. It has been explained by taking into account an additional turn-off base current drive which is usually ignored due to the emitter-base voltage of the transistor in the fall time expression using charge-control model of the transistor. The calculated values of the fall time of various silicon planar transistors are verified experimentally.