DocumentCode
1455065
Title
The effects of irradiation and proton implantation on the density of mobile protons in SiO2 thin films
Author
Vanheusden, K. ; Fleetwood, D.M. ; Shaneyfelt, M.R. ; Draper, B.L. ; Schwank, J.R.
Author_Institution
Res. Lab., Kirtland Air Force Base, NM, USA
Volume
45
Issue
6
fYear
1998
fDate
12/1/1998 12:00:00 AM
Firstpage
2391
Lastpage
2397
Abstract
The radiation response of mobile protons introduced into thermal oxides capped with poly-Si is investigated. Total dose irradiation data show that the cross section for capture of radiation-induced electrons by mobile protons is two orders of magnitude smaller than for electron capture by trapped holes. A consistent model is proposed to explain the weak temperature dependence of the capture process observed in this study as opposed to the strong increase in proton neutralization with increasing temperature observed in an earlier UV exposure study. In contrast with the behavior of SOI material, no post-irradiation trapping of mobile protons could be observed in the thermal SiO2 layer of the Si/SiO2/Si structures studied in this work. In the second part of this work it is shown that, unlike the effect of annealing in a hydrogen containing ambient, proton implantation does not yield a significant number of mobile protons in the buried oxide of Si/SiO2/Si structures
Keywords
electron traps; elemental semiconductors; insulating thin films; ion implantation; proton effects; semiconductor-insulator-semiconductor structures; silicon; silicon compounds; SIS structures; Si-SiO2-Si; buried oxide; electron capture; insulating thin films; mobile proton density; proton implantation; thermal oxides; total dose irradiation data; Annealing; Charge carrier processes; Electron mobility; Electron traps; Hydrogen; Laboratories; Protection; Protons; Temperature; Transistors;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.736459
Filename
736459
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