DocumentCode :
1455306
Title :
Improved millimeter-wave mixer performance analysis at cryogenic temperatures
Author :
Siegel, Peter H. ; Mehdi, Imran ; East, Jack
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume :
1
Issue :
6
fYear :
1991
fDate :
6/1/1991 12:00:00 AM
Firstpage :
129
Lastpage :
131
Abstract :
The results of a 600-GHz mixer performance analysis using an improved model for computing the Schottky diode capacitance-voltage (C-V) relationship are presented. The computed C-V data for a realistic submillimeter-wave mixer diode are given as a function of physical temperature and compared to the standard analytic expression based on a solution of Poisson´s equation. Both C-V relationships are used to predict the performance of an ideally terminated 600 GHz mixer operating at 300, 140, 80, and 30 K. It is shown that the drift-diffusion model more accurately describes the mixer performance when the physical temperature is reduced below approximately=100 K.<>
Keywords :
Schottky-barrier diodes; cryogenics; mixers (circuits); semiconductor device models; solid-state microwave circuits; 30 to 300 K; 600 GHz; C-V relationships; Schottky diode; capacitance model; cryogenic temperatures; drift-diffusion model; ideally terminated; millimeter-wave mixer; performance analysis; physical temperature; submillimeter-wave mixer diode; Capacitance; Capacitance-voltage characteristics; Cryogenics; Millimeter wave technology; Performance analysis; Schottky diodes; Space technology; Submillimeter wave technology; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Microwave and Guided Wave Letters, IEEE
Publisher :
ieee
ISSN :
1051-8207
Type :
jour
DOI :
10.1109/75.91088
Filename :
91088
Link To Document :
بازگشت