Title :
Total dose effects on gate controlled lateral PNP bipolar junction transistors
Author :
Cazenave, Ph. ; Fouillat, P. ; Montagner, X. ; Barnaby, H. ; Schrimpf, R.D. ; Bonora, L. ; David, J.P. ; Touboul, A. ; Calvet, M.-C. ; Calvel, P.
Author_Institution :
Lab. IXL, Bordeaux I Univ., Talence, France
fDate :
12/1/1998 12:00:00 AM
Abstract :
A gate controlled lateral PNP bipolar device has been designed in a commercial BiCMOS process to investigate its sensitivity to radiation-induced degradation. New experimental and simulated results concerning total dose effects are presented. The improved radiation hardness of this device working in its accumulation mode is shown. The influence of the gate potential during irradiation is studied as well as the effect of the gate potential on the degraded current characteristics
Keywords :
bipolar transistors; radiation hardening (electronics); BiCMOS process; accumulation mode; current characteristics; gate controlled lateral PNP bipolar junction transistor; gate potential; radiation hardness; radiation induced degradation; total dose effect; BiCMOS integrated circuits; CMOS technology; Circuit simulation; Circuit testing; Degradation; Electric variables; Electrodes; Pollution measurement; Surface contamination; Telecommunication control;
Journal_Title :
Nuclear Science, IEEE Transactions on
