• DocumentCode
    1455384
  • Title

    Transient response of a transistor-tunnel diode hybrid combination

  • Author

    Srivastava, A. ; Gupta, M.L.

  • Author_Institution
    Birla Institute of Technology and Science, Department of Electrical and Electronics Engineering, Pilani, India
  • Volume
    14
  • Issue
    2
  • fYear
    1976
  • Firstpage
    35
  • Lastpage
    43
  • Abstract
    An approach is suggested for characterising the switching behaviour of a typical transistor-tunnel diode hybrid combination. The method uses the charge-control model for the transistor and empirical power functions for the tunnel diode. Though an accurate nonlinear power function is used for the tunnel diode, the final switching time expressions are obtained in terms of some average time constants associated with the various segments of the tunnel diode characteristic. Experimental observations with tunnel diode in combination with slow and gold-doped switching transistors demonstrate that the models used in the analysis are satisfactory for engineering calculations. Potentially, the method is quite general and can also be used for the analysis of other possible hybrid combinations.
  • Keywords
    bipolar transistors; semiconductor device models; semiconductor switches; tunnel diodes; charge control model; empirical power functions; final switching time expressions; gold doped transistor; hybrid combination; slow switching transistor; switching behaviour; transient response; transistor tunnel diode hybrid combination;
  • fLanguage
    English
  • Journal_Title
    India, IEE-IERE Proceedings -
  • Publisher
    iet
  • ISSN
    0018-9146
  • Type

    jour

  • DOI
    10.1049/iipi.1976.0014
  • Filename
    5258121