Charge collection and radiation hardness of a SOI microdosimeter for medical and space applications

Author

Bradley, P.D. ; Rosenfeld, A.B. ; Lee, K.K. ; Jamieson, D.N. ; Heiser, G. ; Satoh, S.

Author_Institution

Dept. of Eng. Phys., Wollongong Univ., NSW, Australia

Volume

45

Issue

6

fYear

1998

fDate

12/1/1998 12:00:00 AM

Firstpage

2700

Lastpage

2710

Abstract

The first results obtained using a SOI device for microdosimetry applications are presented. Microbeam and broadbeam spectroscopy methods are used for determining minority carrier lifetime and radiation damage constants. A spectroscopy model is presented which includes the majority of effects that impact spectral resolution. Charge collection statistics were found to substantially affect spectral resolution. Lateral diffusion effects significantly complicate charge collection

Keywords

carrier lifetime; diffusion; dosimeters; minority carriers; radiation hardening (electronics); silicon-on-insulator; SOI microdosimeter; broadbeam spectroscopy methods; charge collection; lateral diffusion effects; medical applications; microbeam spectroscopy; minority carrier lifetime; radiation damage constants; radiation hardness; space applications; spectral resolution; spectroscopy model; Application software; Biomedical engineering; Charge carrier lifetime; Diodes; Physics; Radiation detectors; Silicon; Space charge; Spectroscopy; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.736518

Filename

736518