Title :
Proton induced damage in SiC light emitting diodes
Author :
Hinrichse, P.F. ; Houdayer, A.J. ; Barry, A.L. ; Vincent, J.
Author_Institution :
Dept. de Phys., Montreal Univ., Que., Canada
fDate :
12/1/1998 12:00:00 AM
Abstract :
The possible use of SiC LEDs (light emitting diodes) as NIEL (Non Ionizing Energy Loss) monitors for space and other applications has been investigated. The effects of proton irradiation on both the response time and the intensity of the light emitted by “blue” SiC LEDs have been measured for proton energies between 2.0 and 500 MeV. Variation of the damage constants Kτ(Ep), defined in terms of the response time decrement, and KL(Ep), defined in terms of the decrease in light output, are compared with calculations of NIEL and the Relativistic Elastic scattering cross section
Keywords :
energy loss of particles; light emitting diodes; proton effects; semiconductor materials; silicon compounds; 2.0 to 500 MeV; SiC; SiC light emitting diode; blue LED; damage constant; light intensity; nonionizing energy loss monitor; proton irradiation; relativistic elastic scattering cross section; response time; space NIEL monitor; Delay; Energy loss; Frequency measurement; Gallium arsenide; Ionizing radiation; Light emitting diodes; Manufacturing; Protons; Silicon carbide; Time measurement;
Journal_Title :
Nuclear Science, IEEE Transactions on
