Influence of infrared illumination on the accuracy of the quantized Hall resistance

Author

Jeanneret, Blaise ; Jeckelmann, Beat ; Bühlmann, Hans-jörg ; Begems, M.

Author_Institution

Swiss Federal Office of Metrol., Wabern, Switzerland

Volume

46

Issue

2

fYear

1997

fDate

4/1/1997 12:00:00 AM

Firstpage

285

Lastpage

288

Abstract

The influence of infrared radiation on the accuracy of the quantized Hall resistance devices used in metrology is investigated. Samples exhibiting anomalous quantized Hall resistances due to large contact resistances resulting from a partially depleted electron gas can be brought back to a normal behavior by illumination with short pulses of infrared light. In addition, the critical current in the QHE regime can be considerably increased by the same illumination method

Keywords

Hall effect devices; III-V semiconductors; aluminium compounds; contact resistance; electric resistance measurement; gallium arsenide; measurement standards; quantum Hall effect; radiation effects; semiconductor heterojunctions; two-dimensional electron gas; 900 nm; AlGaAs-GaAs; AlGaAs/GaAs heterostructures; QHE regime; anomalous quantized Hall resistances; contact resistances; critical current; depleted electron gas; illumination; infrared illumination; infrared light; infrared radiation; metrology; precision measurement; pulses; quantized Hall resistance; Charge carrier density; Contact resistance; Critical current; Current measurement; Electrical resistance measurement; Electrons; Lighting; Metrology; Temperature; Voltage;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.571833

Filename

571833