• DocumentCode
    1456005
  • Title

    Use of n+ spike doping regions as nonequilibrium connectors

  • Author

    Beton, P.H. ; Long, A.P. ; Couch, N.R. ; Kelly, Michael J.

  • Author_Institution
    GEC Res. Ltd., Wembley
  • Volume
    24
  • Issue
    7
  • fYear
    1988
  • fDate
    3/31/1988 12:00:00 AM
  • Firstpage
    434
  • Lastpage
    435
  • Abstract
    Very thin n+ layers of semiconductor (spike doping) may be used to control the potential difference between microelectronic components while not significantly modifying any nonequilibrium distributions of electron energy or momentum across their extent. The authors demonstrate this general principle with the example of a hot electron injection Gunn diode
  • Keywords
    Gunn diodes; hot carriers; integrated circuit technology; semiconductor doping; Gunn diode; hot electron injection; microelectronic components; n+ spike doping regions; nonequilibrium connectors; nonequilibrium distributions; semiconductor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    5719
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1456005