Single Event Effects in Power MOSFETs and SRAMs Due to 3 MeV, 14 MeV and Fission Neutrons

Author

Hands, Alex ; Morris, Paul ; Dyer, Clive ; Ryden, Keith ; Truscott, Pete

Author_Institution

Aerosp. Div., QinetiQ, Farnborough, UK

Volume

58

Issue

3

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

952

Lastpage

959

Abstract

Various SRAM and MOSFET devices were exposed to 3 MeV and 14 MeV neutrons at a fusion facility and to a fission neutron spectrum with a californium-252 source. Single event burnout (SEB) was observed in several of the MOSFETs in all three environments-the first time this phenomenon has been observed at neutron energies below 10 MeV. In addition to observing single event upsets (SEU) and single event latchup (SEL) in the SRAMs, two devices experienced significant multiple cell upset (MCU) effects which dominated the upset rate. The physical mechanisms underlying these phenomena and the consequences for various radiation environments are discussed.

Keywords

SRAM chips; neutron effects; power MOSFET; SRAM; californium-252 source; electron volt energy 3 MeV to 14 MeV; fission neutron spectrum; fusion facility; multiple cell upset; neutron energy; power MOSFET; single event burnout; single event latchup; single event upsets; Energy measurement; MOSFETs; Neutrons; Particle beams; Radiation effects; Random access memory; Single event upset; MOSFETs; SRAMs; neutron beams; single event effects (SEEs);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2011.2106142

Filename

5719140