DocumentCode :
1456971
Title :
Progress in the measurement of lattice spacing d(220) of silicon
Author :
Nakayama, Kan ; Fujimoto, Hiroyuki
Author_Institution :
Nat. Res. Lab. of Metrol., Ibaraki, Japan
Volume :
46
Issue :
2
fYear :
1997
fDate :
4/1/1997 12:00:00 AM
Firstpage :
580
Lastpage :
583
Abstract :
X-ray and optical interferometry is applied to the measurement of silicon lattice spacing. The previously reported standard deviation 0.16×10-6 has been reduced to 0.05×10-6. The d(220) is 192015.593(0.01) fm after correction of lattice strain by carbon and oxygen
Keywords :
X-ray crystallography; constants; electromagnetic wave interferometry; elemental semiconductors; lattice constants; light interferometry; measurement errors; silicon; 192015.593 fm; Avogadro constant; Si; X-ray crystal density method; X-ray interferometry; XRCD method; lattice spacing d(220); lattice strain correction; optical interferometry; standard deviation; Capacitive sensors; Crystals; Density measurement; Fasteners; Lattices; Measurement uncertainty; Optical interferometry; Optical pumping; Silicon; Temperature measurement;
fLanguage :
English
Journal_Title :
Instrumentation and Measurement, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9456
Type :
jour
DOI :
10.1109/19.571922
Filename :
571922
Link To Document :
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